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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4153 DESCRIPTION With TO-220F package Switching transistor APPLICATIONS For humidifier ,DC-DC converter and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Base current (DC) Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 200 120 8 7 14 3 UNIT V V V A A A W ae ae Open collector Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=3A ;IB=0.3A IC=3A; IB=0.3A VCB=200V; IE=0 VEB=8V; IC=0 IC=0.6A ; VCE=4V IC=3A ; VCE=4V IE=-0.5A ; VCE=12V f=1MHz;VCB=10V 70 70 MIN 120 2SC4153 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 0.5 1.2 0.1 0.1 250 220 30 V V mA mA MHz pF Switching times ton ts tf Fall time Turn-on time Storage time CHA IN E SEM NG IC=3A IB1=0.3A ,IB2=-0.6A VCC=50V, RL=16.7| OND IC TOR UC 110 0.5 |I |I |I 3.0 0.5 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4153 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4153 CHA IN E SEM NG OND IC TOR UC 4 |
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